MSE PRO 10×10 mm AlGaN/GaN HEMT on Si Wafer (GaN/Si)
$79.99
10×10 mm AlGaN/GaN high electron mobility transistors (HEMTs) grown on silicon substrateHEMT structure for 650 V power electronics applicationsSpecial layer structures can be custom made upon request. Please contact us for a quote. D-mode HEMT, E-mode HEMT, RF HEMT wafers are available upon request.Product SKU#: WA0249Thickness of GaN cap layer: 3 nmAlGaN…
10×10 mm AlGaN/GaN high electron mobility transistors (HEMTs) grown on silicon substrate
HEMT structure for 650 V power electronics applications
Special layer structures can be custom made upon request. Please contact us for a quote. D-mode HEMT, E-mode HEMT, RF HEMT wafers are available upon request.
- Product SKU#: WA0249
- Thickness of GaN cap layer: 3 nm
- AlGaN composition: 26% Al, 74% GaN
- AlGaN barrier layer thickness: 25 nm
- AlN inter-layer thickness: 1 nm
- Thickness of GaN layer: 2 um
- Thickness of buffer layer: ~ 1 um
- Thickness of Si (111) substrate: 1000 um
- Sheet resistance (Ohms per square): < 420
- Electron mobility: > 1300 cm2/V-sec for Si substrate
- Sheet carrier concentration (/cm): ~ 1E13
- Breakdown voltage: > 1000 V
- Bow: < 60 um
- RMS roughness (AFM): < 0.5 nm (5 um x 5 um area)
- 2 um GaN layer Resistivity: > 1E5 Ohm.cm
Related Publications
- The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMTs B.M. Green; K.K. Chu; E.M. Chumbes; J.A. Smart; J.R. Shealy; L.F. Eastman
- High breakdown voltage AlGaN-GaN HEMTs achieved by multiple field plates Huili Xing; Y. Dora; A. Chini; S. Heikman; S. Keller; U.K. Mishra
- High breakdown GaN HEMT with overlapping gate structure N.-Q. Zhang; S. Keller; G. Parish; S. Heikman; S.P. DenBaars; U.K. Mishra
- CW operation of short-channel GAN/AlGaN doped channel heterostructure field effect transistors at 10 GHz and 15 GHz M. Asif Khan; Q. Chen; M.S. Shur; B.T. Dermott; J.A. Higgins; J. Burm; W.J. Schaff; L.F. Eastman
- Output power density of 5.1/mm at 18 GHz with an AlGaN/GaN HEMT on Si substrate D. Ducatteau; A. Minko; V. Hoel; E. Morvan; E. Delos; B. Grimbert; H. Lahreche; P. Bove; C. Gaquiere; J.C. De Jaeger; S. Delage
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